Grandis awarded DARPA contract to develop STT-RAM

  • 21-Jun-2010 04:10 EDT

DARPA awarded Grandis Inc. $8.6 million for the second phase of a research project developing spin-transfer torque random access memory (STT-RAM) chips. STT-RAM is a next-generation, solid-state memory technology that is dense, fast, nonvolatile, and radiation-hard, making it suited for defense applications. The program is being carried out by a collaboration between Grandis, the Universities of Virginia and Alabama, and the College of William and Mary. Additional support has been provided by the National Institute of Standards and Technology and the Naval Research Laboratory. During Phase II, work will ultimately include test and verification of STT-RAM integrated memory arrays. The outcome of this DARPA program could lead to advancements in military and space electronics by delivering sophisticated solid-state memory devices for mission-critical applications.

HTML for Linking to Page
Page URL
Rate It
0.00 Avg. Rating

Read More Articles On

Equipment developers are moving quickly to ensure that military users will have long-term access to boards and modules that provide higher performance, easy replacement, and reduced costs. Board and system designers adopting new technologies are standardizing interconnection layouts to ensure that boards designed by various suppliers can be used to upgrade systems as technology advances.

Related Items

Training / Education
Technical Paper / Journal Article
Training / Education