International Rectifier’s high-voltage power MOSFET high-side driver AUIRS2016S features an internal voltage spike (Vs)-to-ground (GND) recharge negative-channel metal-oxide semiconductor (NMOS). Suitable for harsh automotive applications, the device’s output driver features a 250-mA high pulse current buffer stage. The channel can be used to drive an N-channel power MOSFET in the high-side configuration, operating up to 150 v above ground. The AUIRS2016S also provides negative voltage spike immunity (-Vs) to protect against catastrophic events during high-current switching and short-circuit conditions. The robust and reliable AUIRS2016S is designed to meet the rugged performance needs of automotive under-the-hood motor control units, targeting energy-efficient applications such as diesel and gasoline direct fuel-injection systems. Qualified to AEC-Q100 standards, the AUIRS2016S also offers 5-v compatible logic level inputs, one high-side output, and internal low-side Vs recharge.