Metal matrix composite

  • 31-Mar-2008 07:06 EDT
CPS.jpg

 

AlSiC (aluminum silicon carbide) is a metal matrix composite from CPS that is suited for base plates material for insulated gate bipolar transistor (IGBT) used in high-power traction, power control, hybrid-electric vehicle power systems, and fly-by-wire applications. A lightweight material (1/3 that of Cu), AlSiC is a suitable cooler material for the weight-sensitive IGBT applications. AlSiC also has higher strength and stiffness than Cu, which, combined with its lightweight nature, makes AlSiC assemblies more tolerant to shock and vibration. The low isotropic coefficient of thermal expansion value of AlSiC-9 (8 ppm/°C: 30-100°C [86-212°F]) is compatible with the thermal expansion value of the die or substrate used in IGBT applications.

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