1000-V SiC MOSFET

  • 03-Jan-2017 04:32 EST
WS159 Industry¹s First 1000V SiC MOSFET PR.jpg

The 1000-V silicon carbide (SiC) MOSFET from Wolfspeed (Durham, NC) enables a reduction in overall system cost, while improving system efficiency and decreasing system size. The company claims the new MOSFET, specially optimized for EV fast-charging and industrial power supplies, enables a 30% reduction in component count while achieving more than 3x increase in power density and a 33% increase in output power. The increase in output power in a reduced footprint is realized by the ultra-low output capacitance―as low as 60 pF―which significantly lowers switching losses, according to Wolfspeed. The 65 mΩ MOSFET is available in a through-hole, 4L-TO247 package. For more information, visit http://www.wolfspeed.com/

Share
HTML for Linking to Page
Page URL
Grade
Rate It
0.00 Avg. Rating

Read More Articles On

2018-01-26
In Washington, DC, at the 2018 SAE Government/Industry meeting this week, cellular-communications giant AT&T affirmed in a session on connected-vehicle technology that it will launch ultra-fast mobile 5G service in limited areas sometime late this year.
2018-01-24
Osram, a leading global lighting and semiconductor manufacturer, has expanded into pulse infrared lasers for autonomous LIDAR use and is working with with Vergence Automation for advanced imaging technology.

Related Items

Technical Paper / Journal Article
2011-04-12
Standard
2014-01-06
Technical Paper / Journal Article
2011-04-12
Book
2014-01-01
X