Silicon carbide 1200-v MOSFET

  • 29-May-2014 08:24 EDT
CRC120 1200V Gen 2 MOSFET Family MA.jpg

The C2M0025120D from Cree is the industry’s first commercially available silicon carbide (SiC) 1200-v MOSFET with an RDS(ON) of 25 mO in an industry-standard TO-247-3 package. According to the company, the new MOSFET is expected to be widely adopted in PV (photovoltaic) inverters, high-voltage dc/dc converters, induction heating systems, and EV (electric vehicle) charging systems. Based on Cree’s proven C2M SiC MOSFET technology, the device has a pulsed-current rating (IDS Pulse) of 250 A and a positive temperature coefficient, providing engineers with greater design flexibility to explore new concepts. The high IDS Pulse rating makes the device suitable for pulsed-power applications, and the positive temperature coefficient allows the devices to be paralleled to achieve even higher power levels. The higher switching frequency of the C2M0025120D SiC MOSFET enables power electronics design engineers to reduce the size, weight, cost, and complexity of power systems.

HTML for Linking to Page
Page URL
Rate It
0.00 Avg. Rating

Read More Articles On

Tanktwo, a Finland-based startup company is rethinking the basic battery cell and challenging the fundamental economics and operational assumptions of EVs. The ingenious concept is worth engineers' attention.
Ford is to introduce a cylinder deactivation version of its 3-cylinder EcoBoost triple. It will enter production by early 2018 and it is expected to deliver up to a 6% fuel saving with associated CO2 emissions reduction.
The practice of building compatibility checks into your development process ensures that designs are compatible with all system requirements right from the start. Just look at Toyota.
A new version of the LG Chem Z.E. 40 battery delivers nearly double the energy density of its predecessor.

Related Items

Training / Education